ROHM RD3L08DBLHRB Type N-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L08DBLHRBTL
- RS庫存編號:
- 687-458
- 製造零件編號:
- RD3L08DBLHRBTL
- 製造商:
- ROHM
N
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 組，共 2 件）*
TWD73.00
(不含稅)
TWD76.64
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 100 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每膠帶* |
|---|---|---|
| 2 - 18 | TWD36.50 | TWD73.00 |
| 20 - 48 | TWD32.50 | TWD65.00 |
| 50 - 198 | TWD29.00 | TWD58.00 |
| 200 - 998 | TWD23.50 | TWD47.00 |
| 1000 + | TWD23.00 | TWD46.00 |
* 參考價格
- RS庫存編號:
- 687-458
- 製造零件編號:
- RD3L08DBLHRBTL
- 製造商:
- ROHM
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | RD3L08DBLHRB | |
| Package Type | TO-252 (TL) | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Power Dissipation Pd | 76W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.3mm | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Length | 10.50mm | |
| Width | 6.8 mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Drain Source Voltage Vds 60V | ||
Series RD3L08DBLHRB | ||
Package Type TO-252 (TL) | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Power Dissipation Pd 76W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 175°C | ||
Height 2.3mm | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Length 10.50mm | ||
Width 6.8 mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- JP
The ROHM Power MOSFET is engineered for demanding applications requiring high efficiency and robust performance. This 60V, 80A N channel MOSFET features ultra-low on-resistance, delivering superior electrical performance while ensuring reliability. It is designed to operate optimally in various environments, making it ideal for automotive applications, including advanced driver assistance systems (ADAS) and lighting. With compliance to AEC-Q101 and 100% avalanche testing, this component ensures high standards of safety and efficiency in any electronic design. Its compact packaging enables easy integration into space-constrained layouts.
Delivers low on resistance of 7.6mΩ, enhancing efficiency in power transfer
Rated for a maximum continuous drain current of 80A, ensuring reliability under significant loads
Features a wide drain-source voltage of 60V suitable for various high-voltage applications
All products are RoHS compliant, supporting environmentally friendly designs
100% avalanche tested for increased reliability and component longevity
Designed in a DPAK TO-252 package for easy mounting in compact circuits
Offers a broad operating temperature range from -55°C to 175°C, ensuring performance in extreme conditions
Qualified to AEC Q101 , making it ideal for automotive and high-reliability applications
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