ROHM AG191FLD3HRB Type N-Channel Single MOSFETs, 80 A, 60 V Enhancement, 3-Pin TO-252 (TL) AG191FLD3HRBTL

RS庫存編號:: 687-454
製造零件編號:: AG191FLD3HRBTL
製造商:: ROHM

ROHM AG191FLD3HRB Type N-Channel Single MOSFETs, 80 A, 60 V Enhancement, 3-Pin TO-252 (TL) AG191FLD3HRBTL

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可享批量折扣

小計（1 組，共 2 件）*

TWD76.00

(不含稅)

TWD79.80

訂單超過 $1,300.00 免費送貨

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單位	每單位	每膠帶*
2 - 18	TWD38.00	TWD76.00
20 - 48	TWD34.00	TWD68.00
50 - 198	TWD30.50	TWD61.00
200 - 998	TWD29.50	TWD59.00
1000 +	TWD28.50	TWD57.00

* 參考價格

RS庫存編號:: 687-454
製造零件編號:: AG191FLD3HRBTL
製造商:: ROHM

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	ROHM
	Channel Type	Type N
	Product Type	Single MOSFETs
	Maximum Continuous Drain Current Id	80A
	Maximum Drain Source Voltage Vds	60V
	Series	AG191FLD3HRB
	Package Type	TO-252 (TL)
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	7.6mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	76W
	Maximum Gate Source Voltage Vgs	±20 V
	Typical Gate Charge Qg @ Vgs	22nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Length	10.50mm
	Height	2.3mm
	Width	6.80 mm
	Standards/Approvals	RoHS, AEC-Q101
	Automotive Standard	AEC-Q101

	選取全部
	品牌 ROHM
	Channel Type Type N
	Product Type Single MOSFETs
	Maximum Continuous Drain Current Id 80A
	Maximum Drain Source Voltage Vds 60V
	Series AG191FLD3HRB
	Package Type TO-252 (TL)
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 7.6mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 76W
	Maximum Gate Source Voltage Vgs ±20 V
	Typical Gate Charge Qg @ Vgs 22nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Length 10.50mm
	Height 2.3mm
	Width 6.80 mm
	Standards/Approvals RoHS, AEC-Q101
	Automotive Standard AEC-Q101

Datasheet - AG191FLD3HRBTL

The ROHM Power MOSFET is engineered for high-performance applications, providing exceptional efficiency with a maximum Drain-Source voltage of 60V and a continuous drain current of 80A. Designed for demanding automotive systems, this device features low on-resistance, ensuring reduced power loss and enhanced thermal management. Its robust construction includes AEC-Q101 qualification, making it suitable for use in rigorous automotive environments. With a multidimensional thermal resistance capability, this MOSFET effectively handles thermal stress, ensuring reliability under varying operational conditions. Ideal for engineers seeking a reliable component in high-efficiency applications, the AG191FLD3HRB stands out for its performance and operational integrity.

Low on resistance offers improved efficiency and reduces heat generation

Pb free plating conforms to RoHS standards for environmental safety

100% avalanche testing guarantees reliable performance under stress

AEC Q101 qualified, ensuring compliance with automotive industry standards

Supports a wide operating junction and storage temperature range from -55°C to 175°C

Flexible packaging specifications with tape and reel format for convenience in assembly

Integrated thermal resistance minimizes thermal concerns during operation

Supplied with precise gate charge characteristics for optimal switching performance

ROHM AG191FLD3HRB Type N-Channel Single MOSFETs, 80 A, 60 V Enhancement, 3-Pin TO-252 (TL) AG191FLD3HRBTL

訂單超過 $1,300.00 免費送貨

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