ROHM AG086FGD3HRB Type N-Channel Single MOSFETs, 80 A, 40 V Enhancement, 3-Pin TO-252 (TL) AG086FGD3HRBTL
- RS庫存編號:
- 687-456
- 製造零件編號:
- AG086FGD3HRBTL
- 製造商:
- ROHM
N
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可享批量折扣
小計（1 組，共 2 件）*
TWD73.00
(不含稅)
TWD76.64
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 100 件從 2026年2月02日 起發貨
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單位 | 每單位 | 每膠帶* |
|---|---|---|
| 2 - 18 | TWD36.50 | TWD73.00 |
| 20 - 48 | TWD32.50 | TWD65.00 |
| 50 - 198 | TWD29.00 | TWD58.00 |
| 200 - 998 | TWD23.50 | TWD47.00 |
| 1000 + | TWD23.00 | TWD46.00 |
* 參考價格
- RS庫存編號:
- 687-456
- 製造零件編號:
- AG086FGD3HRBTL
- 製造商:
- ROHM
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | AG086FGD3HRB | |
| Package Type | TO-252 (TL) | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 76W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.80 mm | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Height | 2.3mm | |
| Length | 10.50mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series AG086FGD3HRB | ||
Package Type TO-252 (TL) | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 76W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 175°C | ||
Width 6.80 mm | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Height 2.3mm | ||
Length 10.50mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM Power MOSFET is engineered for high-performance applications, featuring a robust construction that ensures reliability and efficiency. With a maximum drain-source voltage of 40V and capable of handling continuous currents up to 80A, this device is an optimal solution for automotive systems and other demanding environments. Its low on-resistance of just 4.1mΩ facilitates minimal power loss during operation, making it particularly beneficial for power management tasks. Fully AEC-Q101 qualified, this MOSFET meets stringent automotive standards, ensuring consistent quality for demanding applications. The product supports efficient heat dissipation, allowing for a maximum power dissipation of 76W while maintaining a wide operational temperature range.
Low on resistance of 4.1mΩ enhances energy efficiency
AEC Q101 qualification assures automotive-grade reliability
Maximum continuous drain current of 80A caters to high load applications
Pulsed drain current capability reaches 160A for transient load handling
Supports gate-source voltage of ±20V for flexible control
Avalanche rated for increased operational safety
Thermal resistance specification aids in efficient heat management
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