ROHM AG185FGD3HRB Type N-Channel Single MOSFETs, -40 V Enhancement, 3-Pin TO-252 (TL) AG185FGD3HRBTL
- RS庫存編號:
- 687-438
- 製造零件編號:
- AG185FGD3HRBTL
- 製造商:
- ROHM
N
可享批量折扣
小計（1 組，共 2 件）*
TWD90.00
(不含稅)
TWD94.50
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 100 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每膠帶* |
|---|---|---|
| 2 - 18 | TWD45.00 | TWD90.00 |
| 20 - 48 | TWD39.50 | TWD79.00 |
| 50 - 198 | TWD35.50 | TWD71.00 |
| 200 - 998 | TWD28.50 | TWD57.00 |
| 1000 + | TWD28.00 | TWD56.00 |
* 參考價格
- RS庫存編號:
- 687-438
- 製造零件編號:
- AG185FGD3HRBTL
- 製造商:
- ROHM
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | -40V | |
| Package Type | TO-252 (TL) | |
| Series | AG185FGD3HRB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 96W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.50mm | |
| Height | 2.3mm | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Width | 6.80 mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds -40V | ||
Package Type TO-252 (TL) | ||
Series AG185FGD3HRB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 96W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 175°C | ||
Length 10.50mm | ||
Height 2.3mm | ||
Standards/Approvals AEC-Q101, RoHS | ||
Width 6.80 mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM N channel power MOSFET designed for automotive applications. This device is tailored to provide efficient switching with a maximum drain-source voltage of 40V and a continuous drain current of 80A. It features a low on-resistance, ensuring minimal power loss during operation, which contributes to improved thermal management and performance in demanding environments. With a power dissipation capability of 96W, this MOSFET is suitable for various applications that require reliable and robust performance. Its Pb-free plating and RoHS compliance highlight 's commitment to environmentally friendly manufacturing. This part is AEC-Q101 qualified, ensuring it meets the stringent automotive standards for reliability and safety.
Low on resistance of 3.2mΩ maximises efficiency and reduces heat generation
Rated for a continuous drain current of 80A, suitable for robust applications
Provides a high power dissipation capability of 96W for demanding tasks
Designed for a maximum drain-source voltage of 40V ensuring versatility in applications
AEC Q101 qualified, ensuring high reliability in automotive use
Pb free plating and RoHS compliance reflect environmentally conscious production
Suitable for various automotive systems, enhancing system performance and longevity
Features a compact DPAK package for efficient space utilisation on PCB designs
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