Infineon ISC Type N-Channel Power Transistor, 541 A, 40 V Enhancement, 8-Pin PG-TDSON-8 ISCH42N04LM7ATMA1

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TWD622.00

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TWD653.10

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  • 2027年11月24日 發貨
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5 - 45TWD124.40TWD622.00
50 - 95TWD118.20TWD591.00
100 +TWD109.40TWD547.00

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RS庫存編號:
349-391
製造零件編號:
ISCH42N04LM7ATMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

Power Transistor

Maximum Continuous Drain Current Id

541A

Maximum Drain Source Voltage Vds

40V

Series

ISC

Package Type

PG-TDSON-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.42mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

234W

Typical Gate Charge Qg @ Vgs

79nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Standards/Approvals

IEC61249‑2‑21, JEDEC, RoHS

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon OptiMOS 7 Power Transistor, 40 V, N-channel is a high performance MOSFET designed to offer exceptional efficiency and reliability in power switching applications. Featuring very low on-resistance (RDS(on)), it helps minimize conduction losses, enhancing overall system efficiency. Its superior thermal resistance ensures effective heat dissipation, making it well-suited for high power applications. Additionally, it is 100% avalanche tested, providing robust protection against transient events and ensuring stable performance even under harsh conditions.

Pb free lead plating and RoHS compliant

Halogen free according to IEC61249-2-21

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