Infineon ISC Type N-Channel N-Channel Mosfet, 85 A, 120 V Enhancement, 8-Pin PG-TDSON-8 ISC078N12NM6ATMA1
- RS庫存編號:
- 349-145
- 製造零件編號:
- ISC078N12NM6ATMA1
- 製造商:
- Infineon
可享批量折扣
小計（1 包，共 5 件）*
TWD441.00
(不含稅)
TWD463.05
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 5,000 件從 2026年1月01日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD88.20 | TWD441.00 |
| 50 - 95 | TWD83.80 | TWD419.00 |
| 100 - 495 | TWD77.60 | TWD388.00 |
| 500 - 995 | TWD71.40 | TWD357.00 |
| 1000 + | TWD68.60 | TWD343.00 |
* 參考價格
- RS庫存編號:
- 349-145
- 製造零件編號:
- ISC078N12NM6ATMA1
- 製造商:
- Infineon
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | N-Channel Mosfet | |
| Maximum Continuous Drain Current Id | 85A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Package Type | PG-TDSON-8 | |
| Series | ISC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7.8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 125W | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, JEDEC, J-STD-020, RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type N-Channel Mosfet | ||
Maximum Continuous Drain Current Id 85A | ||
Maximum Drain Source Voltage Vds 120V | ||
Package Type PG-TDSON-8 | ||
Series ISC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7.8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 125W | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, JEDEC, J-STD-020, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon OptiMOS 6 Power Transistor is an N channel, normal level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), reducing conduction losses and improving energy efficiency. The transistor offers an excellent gate charge x RDS(on) product (FOM), enhancing switching performance. With very low reverse recovery charge (Qrr), it minimizes switching losses, making it ideal for fast-switching applications. It also has a high avalanche energy rating, ensuring robustness under transient conditions. Additionally, the MOSFET operates at a 175°C temperature, providing high thermal endurance for demanding applications.
Optimized for high frequency switching and synchronous rectification
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
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