Infineon ISC Type N-Channel OptiMOST Power-MOSFET, 63 A, 30 V Enhancement, 8-Pin PG-TDSON-8
- RS庫存編號:
- 273-3040
- 製造零件編號:
- ISC045N03L5SATMA1
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 包,共 25 件)*
TWD352.50
(不含稅)
TWD370.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 4,950 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 25 | TWD14.10 | TWD352.50 |
| 50 - 475 | TWD13.00 | TWD325.00 |
| 500 - 975 | TWD12.10 | TWD302.50 |
| 1000 - 2475 | TWD11.80 | TWD295.00 |
| 2500 + | TWD11.60 | TWD290.00 |
* 參考價格
- RS庫存編號:
- 273-3040
- 製造零件編號:
- ISC045N03L5SATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | OptiMOST Power-MOSFET | |
| Maximum Continuous Drain Current Id | 63A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | ISC | |
| Package Type | PG-TDSON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 30W | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Forward Voltage Vf | 0.89V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC61249-2-21, RoHS, JEDEC | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type OptiMOST Power-MOSFET | ||
Maximum Continuous Drain Current Id 63A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series ISC | ||
Package Type PG-TDSON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 30W | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Forward Voltage Vf 0.89V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC61249-2-21, RoHS, JEDEC | ||
Automotive Standard No | ||
The Infineon low voltage power MOSFET is offering broad accessibility and competitive price/performance ratio.
Enables cost effective solutions
Fast shipment
Easy to design in
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