Infineon ISC Type N-Channel Power Transistor, 74 A, 200 V Enhancement, 8-Pin PG-TDSON-8 FL ISC151N20NM6ATMA1
- RS庫存編號:
- 349-149
- 製造零件編號:
- ISC151N20NM6ATMA1
- 製造商:
- Infineon
可享批量折扣
小計（1 包，共 2 件）*
TWD411.00
(不含稅)
TWD431.56
(含稅)
訂單超過 $1,300.00 免費送貨
庫存資訊目前無法查詢
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 18 | TWD205.50 | TWD411.00 |
| 20 - 198 | TWD185.00 | TWD370.00 |
| 200 - 998 | TWD170.50 | TWD341.00 |
| 1000 - 1998 | TWD158.50 | TWD317.00 |
| 2000 + | TWD142.00 | TWD284.00 |
* 參考價格
- RS庫存編號:
- 349-149
- 製造零件編號:
- ISC151N20NM6ATMA1
- 製造商:
- Infineon
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 74A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | PG-TDSON-8 FL | |
| Series | ISC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 15.1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Maximum Power Dissipation Pd | 200W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, JEDEC, J-STD-020, RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 74A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type PG-TDSON-8 FL | ||
Series ISC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 15.1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Maximum Power Dissipation Pd 200W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, JEDEC, J-STD-020, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS 6 Power Transistor is an N-channel, normal level MOSFET designed for high performance power applications. It features very low on-resistance (RDS(on)), which helps to minimize conduction losses and improve system efficiency. With an excellent gate charge x RDS(on) product (FOM), this transistor ensures optimized switching performance. It also offers very low reverse recovery charge (Qrr), reducing switching losses and enhancing overall efficiency in fast-switching circuits. Designed to operate at a 175°C temperature, it provides high reliability in demanding environments and offers superior thermal performance for robust operation.
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
100% avalanche tested
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