Infineon ISC Type N-Channel MOSFET, 121 A, 40 V, 8-Pin TDSON-8 FL ISC028N04NM5ATMA1
- RS庫存編號:
- 234-7000
- 製造零件編號:
- ISC028N04NM5ATMA1
- 製造商:
- Infineon
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TWD217.00
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TWD227.85
(含稅)
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD43.40 | TWD217.00 |
| 10 - 95 | TWD42.80 | TWD214.00 |
| 100 - 245 | TWD41.80 | TWD209.00 |
| 250 - 495 | TWD40.80 | TWD204.00 |
| 500 + | TWD40.00 | TWD200.00 |
* 參考價格
- RS庫存編號:
- 234-7000
- 製造零件編號:
- ISC028N04NM5ATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 121A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | ISC | |
| Package Type | TDSON-8 FL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.8mΩ | |
| Maximum Power Dissipation Pd | 75W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 1.1 mm | |
| Standards/Approvals | No | |
| Height | 4.4mm | |
| Length | 3.8mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 121A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series ISC | ||
Package Type TDSON-8 FL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.8mΩ | ||
Maximum Power Dissipation Pd 75W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Width 1.1 mm | ||
Standards/Approvals No | ||
Height 4.4mm | ||
Length 3.8mm | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 power transistor N-channel MOSFET has 40V drain source breakdown voltage and 121A continuous drain current. This product offers a Benchmark solution for applications requiring normal level (higher threshold voltage) drive capability. The high Vth in the normal level portfolio offers immunity to false turn-on due to noisy environments. In addition, lower QGD/QGS ratios reduce the Peak of the gate voltage spikes, further contributing to the robustness against unwanted turn-on.
Battery powered application
LV motor drives
Very low on-resistanceRDS(on)
100% avalanche tested
175°C junction temperature
Superior thermal resistance
Low gate charge
Reduced switching losses
Suitable for operation at higher frequencies
N-channel
Pb-free lead plating
RoHS compliant
Halogen-free according to IEC61249-2-21
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