Infineon ISC Type N-Channel Power Transistor, 170 A, 120 V Enhancement, 8-Pin PG-TDSON-8 FL ISC032N12LM6ATMA1
- RS庫存編號:
- 349-139
- 製造零件編號:
- ISC032N12LM6ATMA1
- 製造商:
- Infineon
可享批量折扣
小計（1 包，共 2 件）*
TWD322.00
(不含稅)
TWD338.10
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 5,000 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 18 | TWD161.00 | TWD322.00 |
| 20 - 198 | TWD145.00 | TWD290.00 |
| 200 - 998 | TWD133.50 | TWD267.00 |
| 1000 - 1998 | TWD124.00 | TWD248.00 |
| 2000 + | TWD111.00 | TWD222.00 |
* 參考價格
- RS庫存編號:
- 349-139
- 製造零件編號:
- ISC032N12LM6ATMA1
- 製造商:
- Infineon
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 170A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Package Type | PG-TDSON-8 FL | |
| Series | ISC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Maximum Power Dissipation Pd | 211W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, JEDEC, RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 170A | ||
Maximum Drain Source Voltage Vds 120V | ||
Package Type PG-TDSON-8 FL | ||
Series ISC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Maximum Power Dissipation Pd 211W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, JEDEC, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon OptiMOS 6 Power Transistor is an N-channel, logic level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), which reduces conduction losses and improves performance. The transistor boasts an excellent gate charge x RDS(on) product (FOM), ensuring optimal switching characteristics. Additionally, it offers very low reverse recovery charge (Qrr), minimizing switching losses.
Optimized for high frequency switching and synchronous rectification
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
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