Infineon ISC Type N-Channel Power Transistor, 142 A, 135 V Enhancement, 8-Pin PG-TDSON-8 ISC046N13NM6ATMA1
- RS庫存編號:
- 349-143
- 製造零件編號:
- ISC046N13NM6ATMA1
- 製造商:
- Infineon
可享批量折扣
小計（1 包，共 2 件）*
TWD358.00
(不含稅)
TWD375.90
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年6月02日 發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 18 | TWD179.00 | TWD358.00 |
| 20 - 198 | TWD161.00 | TWD322.00 |
| 200 - 998 | TWD148.50 | TWD297.00 |
| 1000 - 1998 | TWD138.00 | TWD276.00 |
| 2000 + | TWD123.50 | TWD247.00 |
* 參考價格
- RS庫存編號:
- 349-143
- 製造零件編號:
- ISC046N13NM6ATMA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 142A | |
| Maximum Drain Source Voltage Vds | 135V | |
| Package Type | PG-TDSON-8 | |
| Series | ISC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 211W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, JEDEC, J-STD-020, RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 142A | ||
Maximum Drain Source Voltage Vds 135V | ||
Package Type PG-TDSON-8 | ||
Series ISC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 211W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, JEDEC, J-STD-020, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon OptiMOS 6 Power Transistor is an N-channel, normal level MOSFET designed for high performance power applications. It features very low on-resistance (RDS(on)), which minimizes conduction losses and enhances overall efficiency. The transistor also offers an excellent gate charge x RDS(on) product (FOM), ensuring optimal switching performance. With very low reverse recovery charge (Qrr), it reduces switching losses, making it suitable for fast-switching applications. Additionally, the device is 100% avalanche tested, ensuring reliability and robustness under stress conditions.
175°C operating temperature
Optimized for motor drives and battery powered applications
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
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