Infineon ISC Type N-Channel MOSFET, 164 A, 100 V Enhancement, 8-Pin PG-TDSON-8 ISC035N10NM5LF2ATMA1
- RS庫存編號:
- 349-141
- 製造零件編號:
- ISC035N10NM5LF2ATMA1
- 製造商:
- Infineon
可享批量折扣
查看批量定價選項小計（1 包，共 2 件）*
TWD330.00
(不含稅)
TWD346.50
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 4,794 件從 2027年6月03日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 18 | TWD165.00 | TWD330.00 |
| 20 - 198 | TWD148.50 | TWD297.00 |
| 200 - 998 | TWD137.00 | TWD274.00 |
| 1000 - 1998 | TWD127.00 | TWD254.00 |
| 2000 + | TWD114.00 | TWD228.00 |
* 參考價格
- RS庫存編號:
- 349-141
- 製造零件編號:
- ISC035N10NM5LF2ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 164A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | ISC | |
| Package Type | PG-TDSON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 217W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, IEC61249-2-21, JEDEC | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 164A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series ISC | ||
Package Type PG-TDSON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 217W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, IEC61249-2-21, JEDEC | ||
- COO (Country of Origin):
- CN
Infineon ISC Series MOSFET, 100V Maximum Drain Source Voltage, 164A Maximum Continuous Drain Current - ISC035N10NM5LF2ATMA1
This MOSFET is a high-current switching transistor designed for surface-mount power applications. It operates as an N-channel enhancement device suitable for managing substantial drain currents in compact electronic assemblies. The component is built to function across a wide thermal range and supports board-mounted configurations requiring low conduction losses and robust power handling.
Features and Benefits:
• Very low Rds(on) 3.5 mΩ reduces conduction losses during high current
• High continuous drain current 164A supports demanding load conditions
• Voltage rating 100V allows use in medium-voltage power stages
• Power dissipation 217W enables sustained thermal loading in constrained spaces
• Gate tolerance ±20V accommodates common drive schemes with margin
• Fast forward voltage 1.2V minimises switching conduction drop
• High continuous drain current 164A supports demanding load conditions
• Voltage rating 100V allows use in medium-voltage power stages
• Power dissipation 217W enables sustained thermal loading in constrained spaces
• Gate tolerance ±20V accommodates common drive schemes with margin
• Fast forward voltage 1.2V minimises switching conduction drop
Applications
• Suitable for automotive power converters operating in harsh temperatures
• Ideal for traction motor inverters requiring high continuous current
• Used with dc-dc converters needing low conduction-loss switches
• Can be used for server power stages where compact surface mounting matters
• Suitable for battery-management systems in high-power installations
• Ideal for traction motor inverters requiring high continuous current
• Used with dc-dc converters needing low conduction-loss switches
• Can be used for server power stages where compact surface mounting matters
• Suitable for battery-management systems in high-power installations
What mounting style is required on the PCB for this component?
It is supplied in a PG-TDSON-8 package and requires surface-mount land patterns compatible with that thermal pad and eight-pin footprint.
How does the device perform in extreme ambient temperatures?
The permitted operating range spans from -55 °C up to 175 °C, allowing operation in both sub-zero and elevated-temperature environments without derating outside normal thermal-design practice.
What switching behaviour should designers expect regarding gate drive?
The gate must be limited to a maximum of 20 V
typical drive schemes employ gate voltages below this threshold to ensure reliable enhancement switching.
Are there standards governing material and manufacturing conformity?
The device adheres to RoHS, IEC 61249-2-21 and JEDEC specifications related to materials and package definitions.
相關連結
- Infineon ISC Type N-Channel MOSFET 120 V Enhancement, 8-Pin PG-TDSON-8 ISC320N12LM6ATMA1
- Infineon ISC Type N-Channel MOSFET 120 V Enhancement, 8-Pin PG-TDSON-8 ISC110N12NM6ATMA1
- Infineon ISC Type N-Channel Power Transistor 40 V Enhancement, 8-Pin PG-TDSON-8 ISCH42N04LM7ATMA1
- Infineon ISC Type N-Channel Power Transistor 135 V Enhancement, 8-Pin PG-TDSON-8 ISC046N13NM6ATMA1
- Infineon ISC Type N-Channel OptiMOST Power-MOSFET 30 V Enhancement, 8-Pin PG-TDSON-8
- Infineon ISC Type N-Channel OptiMOST Power-MOSFET 30 V Enhancement, 8-Pin PG-TDSON-8 ISC045N03L5SATMA1
- Infineon ISC Type N-Channel N-Channel Mosfet 120 V Enhancement, 8-Pin PG-TDSON-8 ISC078N12NM6ATMA1
- Infineon ISC Type N-Channel Power Transistor 120 V Enhancement, 8-Pin PG-TDSON-8 FL ISC032N12LM6ATMA1