Infineon ISC Type N-Channel MOSFET, 24 A, 120 V Enhancement, 8-Pin PG-TDSON-8 ISC320N12LM6ATMA1
- RS庫存編號:
- 349-151
- 製造零件編號:
- ISC320N12LM6ATMA1
- 製造商:
- Infineon
可享批量折扣
小計（1 包，共 10 件）*
TWD308.00
(不含稅)
TWD323.40
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 4,970 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 90 | TWD30.80 | TWD308.00 |
| 100 - 240 | TWD29.20 | TWD292.00 |
| 250 - 490 | TWD27.10 | TWD271.00 |
| 500 - 990 | TWD25.00 | TWD250.00 |
| 1000 + | TWD24.00 | TWD240.00 |
* 參考價格
- RS庫存編號:
- 349-151
- 製造零件編號:
- ISC320N12LM6ATMA1
- 製造商:
- Infineon
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Package Type | PG-TDSON-8 | |
| Series | ISC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 32mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 43W | |
| Typical Gate Charge Qg @ Vgs | 4.1nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, J-STD-020, RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 120V | ||
Package Type PG-TDSON-8 | ||
Series ISC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 32mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 43W | ||
Typical Gate Charge Qg @ Vgs 4.1nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, J-STD-020, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon OptiMOS 6 Power Transistor is an N channel, logic level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), reducing conduction losses and improving energy efficiency. The transistor offers an excellent gate charge x RDS(on) product (FOM), enhancing switching performance. With very low reverse recovery charge (Qrr), it minimizes switching losses, making it ideal for fast-switching applications. It also has a high avalanche energy rating, ensuring robustness under transient conditions. Additionally, the MOSFET operates at a 175°C temperature, providing high thermal endurance for demanding applications.
Optimized for high frequency switching and synchronous rectification
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
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