Vishay SiSS N-Channel MOSFET, 50.3 A, 80 V N, 8-Pin 1212-8S SISS32ADN-T1-UE3

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  • 2027年2月16日 發貨
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RS庫存編號:
878-901
製造零件編號:
SISS32ADN-T1-UE3
製造商:
Vishay
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品牌

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

50.3A

Maximum Drain Source Voltage Vds

80V

Package Type

1212-8S

Series

SiSS

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.0087Ω

Channel Mode

N

Typical Gate Charge Qg @ Vgs

24nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

65.7W

Maximum Operating Temperature

150°C

Length

3.4mm

Width

3.4mm

Height

0.83mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay semiconductor is a robust N-Channel MOSFET designed for efficient power management, featuring low on-state resistance and enhanced thermal performance for demanding operational environments.

TrenchFET Gen IV technology offers superior efficiency

Very low RDS(on) reduces power loss during operation

Gate-source threshold voltage guarantees reliable switching

Extensive temperature range ensures operation in various conditions

Package design allows for simplified integration in circuit layouts

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