Vishay SISS N-Channel Single MOSFETs, 52 A, 60 V Enhancement Mode, 8-Pin PowerPAK 1212-8SLW SISS862ADN-T1-UE3

N
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TWD44.00

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TWD46.20

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  • 2027年10月18日 發貨
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1 - 24TWD44.00
25 - 99TWD30.00
100 +TWD17.00

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RS庫存編號:
829-348
製造零件編號:
SISS862ADN-T1-UE3
製造商:
Vishay
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品牌

Vishay

Channel Type

N

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

52A

Maximum Drain Source Voltage Vds

60V

Package Type

PowerPAK 1212-8SLW

Series

SISS

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.0072Ω

Channel Mode

Enhancement Mode

Maximum Power Dissipation Pd

39W

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

19.8nC

Maximum Operating Temperature

150°C

Length

3.3mm

Height

1.07mm

Width

3.3mm

Standards/Approvals

RoHS Compliant

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay Advanced N-Channel MOSFET designed primarily for high-efficiency switching applications. It delivers robust performance with low on-resistance characteristics.

Operating voltage up to 60V ensures versatility across applications

Very low on-state resistance optimises power efficiency

Guaranteed safe operating area enhances reliability during high-demand conditions

Thoroughly tested for R and UIS for assured performance

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