Vishay SISS N-Channel Single MOSFETs, 7 A, 60 V Enhancement Mode, 8-Pin PowerPAK 1212-8SLW SISS4634LDN-T1-GE3
- RS庫存編號:
- 829-347
- 製造零件編號:
- SISS4634LDN-T1-GE3
- 製造商:
- Vishay
N
可享批量折扣
查看批量定價選項小計（1 件）*
TWD23.00
(不含稅)
TWD24.15
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年10月18日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 24 | TWD23.00 |
| 25 - 99 | TWD15.00 |
| 100 + | TWD8.00 |
* 參考價格
- RS庫存編號:
- 829-347
- 製造零件編號:
- SISS4634LDN-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK 1212-8SLW | |
| Series | SISS | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0285Ω | |
| Channel Mode | Enhancement Mode | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 7.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 19.8W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.3mm | |
| Standards/Approvals | RoHS Compliant | |
| Length | 3.3mm | |
| Height | 1.04mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Single MOSFETs | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK 1212-8SLW | ||
Series SISS | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0285Ω | ||
Channel Mode Enhancement Mode | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 7.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 19.8W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 3.3mm | ||
Standards/Approvals RoHS Compliant | ||
Length 3.3mm | ||
Height 1.04mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay cutting-edge N-Channel MOSFET designed for efficient power management. It excels in reducing switching-related power loss while providing robust performance across various applications.
Features TrenchFET Gen IV technology for enhanced efficiency
Fully lead-free device ensures environmental compliance
Optimised charge characteristics minimise energy losses
Comprehensive Rg and UIS testing guarantees reliability
相關連結
- Vishay SISS N channel-Channel Single MOSFETs 60 V Enhancement Mode, 8-Pin PowerPAK 1212-8SLW SISS862ADN-T1-UE3
- Vishay SISS Type N-Channel MOSFET 150 V Enhancement, 8-Pin PowerPAK 1212-8S SISS5710DN-T1-GE3
- Vishay TrenchFET N channel-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212-8SLW SQS136ELNW-T1_GE3
- Vishay TrenchFET N channel-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212-8SLW SQS136ENW-T1_GE3
- Vishay SISS Type N-Channel MOSFET 100 V Enhancement, 8-Pin 1212-8S SISS5112DN-T1-GE3
- Vishay SISS Type N-Channel MOSFET 100 V Enhancement, 8-Pin 1212-8S SISS5110DN-T1-GE3
- Vishay SISS Type N-Channel MOSFET 100 V Enhancement, 8-Pin 1212-8S SISS5108DN-T1-GE3
- Vishay SISS Type N-Channel MOSFET 40 V Enhancement, 8-Pin 1212-8 SISS4410DN-T1-GE3