製造零件編號

Vishay SISS Type N-Channel MOSFET, 40.7 A, 100 V Enhancement, 8-Pin 1212-8S

RS庫存編號:: 279-9995
製造零件編號:: SISS5112DN-T1-GE3
製造商:: Vishay

Vishay SISS Type N-Channel MOSFET, 40.7 A, 100 V Enhancement, 8-Pin 1212-8S

此圖片僅供參考，請參閲產品詳細資訊及規格

小計（1 卷，共 3000 件）*

TWD61,200.00

(不含稅)

TWD64,260.00

訂單超過 $1,300.00 免費送貨

有庫存

6,000 件準備從其他地點送貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
3000 +	TWD20.40	TWD61,200.00

* 參考價格

RS庫存編號:: 279-9995
製造零件編號:: SISS5112DN-T1-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	40.7A
	Maximum Drain Source Voltage Vds	100V
	Series	SISS
	Package Type	1212-8S
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0149Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	52W
	Typical Gate Charge Qg @ Vgs	16nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Operating Temperature	150°C
	Length	3.3mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 40.7A
	Maximum Drain Source Voltage Vds 100V
	Series SISS
	Package Type 1212-8S
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0149Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 52W
	Typical Gate Charge Qg @ Vgs 16nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Operating Temperature 150°C
	Length 3.3mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SISS5112DN-T1-GE3

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

Vishay SISS Type N-Channel MOSFET, 40.7 A, 100 V Enhancement, 8-Pin 1212-8S

訂單超過 $1,300.00 免費送貨

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