製造零件編號

Vishay SISS Type N-Channel MOSFET, 162 A, 30 V Enhancement, 8-Pin 1212-8S SISS52DN-T1-UE3

RS庫存編號:: 279-9997
製造零件編號:: SISS52DN-T1-UE3
製造商:: Vishay

Vishay SISS Type N-Channel MOSFET, 162 A, 30 V Enhancement, 8-Pin 1212-8S SISS52DN-T1-UE3

此圖片僅供參考，請參閲產品詳細資訊及規格

小計（1 卷，共 3000 件）*

TWD78,900.00

(不含稅)

TWD82,860.00

庫存資訊目前無法存取 - 請稍後再回來查看

單位	每單位	每卷*
3000 +	TWD26.30	TWD78,900.00

* 參考價格

RS庫存編號:: 279-9997
製造零件編號:: SISS52DN-T1-UE3
製造商:: Vishay

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產品詳細資訊

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選取全部	屬性	值
	品牌	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	162A
	Maximum Drain Source Voltage Vds	30V
	Package Type	1212-8S
	Series	SISS
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0012Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	±20 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	57W
	Typical Gate Charge Qg @ Vgs	65nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	3.3mm
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 162A
	Maximum Drain Source Voltage Vds 30V
	Package Type 1212-8S
	Series SISS
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0012Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs ±20 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 57W
	Typical Gate Charge Qg @ Vgs 65nC
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 3.3mm
	Automotive Standard No

Datasheet - SISS52DN-T1-UE3

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

Vishay SISS Type N-Channel MOSFET, 162 A, 30 V Enhancement, 8-Pin 1212-8S SISS52DN-T1-UE3

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