Vishay SISS Type N-Channel MOSFET, 55.9 A, 100 V Enhancement, 8-Pin 1212-8S SISS5110DN-T1-GE3

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TWD251.20

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TWD263.76

(含稅)

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4 - 56TWD62.80TWD251.20
60 - 96TWD47.00TWD188.00
100 - 236TWD42.00TWD168.00
240 - 996TWD40.80TWD163.20
1000 +TWD40.00TWD160.00

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包裝方式：
RS庫存編號:
279-9994
製造零件編號:
SISS5110DN-T1-GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

55.9A

Maximum Drain Source Voltage Vds

100V

Series

SISS

Package Type

1212-8S

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0126Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

20nC

Maximum Power Dissipation Pd

56.8W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Length

3.3mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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