Vishay SISS Type P-Channel MOSFET, 59.2 A, 40 V Enhancement, 8-Pin 1212-8S SISS4409DN-T1-GE3

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TWD273.00

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TWD286.65

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1000 +TWD35.00TWD175.00

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包裝方式：
RS庫存編號:
279-9988
製造零件編號:
SISS4409DN-T1-GE3
製造商:
Vishay
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品牌

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

59.2A

Maximum Drain Source Voltage Vds

40V

Package Type

1212-8S

Series

SISS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.009Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

126nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

56.8W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

3.3mm

Automotive Standard

No

The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.

New generation power MOSFET

100 percent Rg and UIS tested

Ultra low RDS x Qg FOM product

Fully lead (Pb)-free device

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