Vishay SISS Type N-Channel MOSFET, 128 A, 40 V Enhancement, 8-Pin 1212-8S SISS4402DN-T1-GE3

此圖片僅供參考，請參閲產品詳細資訊及規格

查看所有MOSFETs
可享批量折扣

小計（1 包，共 4 件）*

TWD258.00

(不含稅)

TWD270.88

(含稅)

Add to Basket
選擇或輸入數量
有庫存
  • 6,000 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
每包*
4 - 56TWD64.50TWD258.00
60 - 96TWD60.50TWD242.00
100 - 236TWD53.80TWD215.20
240 - 996TWD52.80TWD211.20
1000 +TWD51.80TWD207.20

* 參考價格

包裝方式：
RS庫存編號:
279-9986
製造零件編號:
SISS4402DN-T1-GE3
製造商:
Vishay
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

128A

Maximum Drain Source Voltage Vds

40V

Package Type

1212-8S

Series

SISS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0022Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

7nC

Maximum Power Dissipation Pd

65.7W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

3.3mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

相關連結