Vishay SISS Type N-Channel MOSFET, 26.2 A, 150 V Enhancement, 8-Pin PowerPAK 1212-8S SISS5710DN-T1-GE3
- RS庫存編號:
- 268-8349
- 製造零件編號:
- SISS5710DN-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD303.00
(不含稅)
TWD318.15
(含稅)
訂單超過 $1,300.00 免費送貨
正在逐步停售
- 最終 6,000 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD60.60 | TWD303.00 |
| 50 - 95 | TWD54.40 | TWD272.00 |
| 100 - 245 | TWD43.80 | TWD219.00 |
| 250 + | TWD43.40 | TWD217.00 |
* 參考價格
- RS庫存編號:
- 268-8349
- 製造零件編號:
- SISS5710DN-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 26.2A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | PowerPAK 1212-8S | |
| Series | SISS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0315Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Power Dissipation Pd | 54.3W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 3.3mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 26.2A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type PowerPAK 1212-8S | ||
Series SISS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0315Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Power Dissipation Pd 54.3W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 3.3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N channel TrenchFET generation 5 power MOSFET is lead Pb and halogen free device. It is used in applications such as synchronous rectification, motor drive control, power supplies.
Very low figure of merit
ROHS compliant
UIS tested 100 percent
相關連結
- Vishay SISS Type N-Channel MOSFET 150 V Enhancement, 8-Pin PowerPAK 1212-8S SISS5710DN-T1-GE3
- Vishay SISS Type P-Channel MOSFET 40 V Enhancement, 8-Pin 1212-8S SISS4409DN-T1-GE3
- Vishay SISS Type N-Channel MOSFET 40 V Enhancement, 8-Pin 1212-8S SISS4402DN-T1-GE3
- Vishay SISS Type N-Channel MOSFET 80 V Enhancement, 8-Pin 1212-8S SISS5808DN-T1-GE3
- Vishay SISS Type N-Channel MOSFET 100 V Enhancement, 8-Pin 1212-8S SISS5108DN-T1-GE3
- Vishay SISS Type N-Channel MOSFET 100 V Enhancement, 8-Pin 1212-8S SISS5112DN-T1-GE3
- Vishay SISS Type N-Channel MOSFET 100 V Enhancement, 8-Pin 1212-8S SISS5110DN-T1-GE3
- Vishay SIS Type N-Channel MOSFET 80 V, 8-Pin PowerPAK 1212-8S SiSS588DN-T1-GE3