Vishay SiSS52DN Type N-Channel MOSFET, 162 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SiSS52DN-T1-GE3
- RS庫存編號:
- 210-5016
- 製造零件編號:
- SiSS52DN-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD270.00
(不含稅)
TWD283.50
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 14,430 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 740 | TWD27.00 | TWD270.00 |
| 750 - 1490 | TWD26.30 | TWD263.00 |
| 1500 + | TWD25.90 | TWD259.00 |
* 參考價格
- RS庫存編號:
- 210-5016
- 製造零件編號:
- SiSS52DN-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 162A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK 1212 | |
| Series | SiSS52DN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.95mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Typical Gate Charge Qg @ Vgs | 43.2nC | |
| Maximum Power Dissipation Pd | 57W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.4mm | |
| Width | 3.4 mm | |
| Height | 0.83mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 162A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK 1212 | ||
Series SiSS52DN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.95mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Typical Gate Charge Qg @ Vgs 43.2nC | ||
Maximum Power Dissipation Pd 57W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.4mm | ||
Width 3.4 mm | ||
Height 0.83mm | ||
Automotive Standard No | ||
The Vishay N-Channel 30 V (D-S) MOSFET has PowerPAK 1212-8S package type.
TrenchFET Gen V power MOSFET
Very low RDS x Qg figure-of-merit (FOM)
Enables higher power density with very low RDS(on) and thermally enhanced compact package
100 % Rg and UIS tested
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