Vishay SiS N channel-Channel MOSFET, 55 A, 100 V Enhancement, 8-Pin PowerPAK 1212 SiSD5110DN
- RS庫存編號:
- 735-132
- 製造零件編號:
- SiSD5110DN
- 製造商:
- Vishay
N
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- RS庫存編號:
- 735-132
- 製造零件編號:
- SiSD5110DN
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SiS | |
| Package Type | PowerPAK 1212 | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0095Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 100V | |
| Typical Gate Charge Qg @ Vgs | 19.3nC | |
| Maximum Power Dissipation Pd | 57W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4mm | |
| Height | 1mm | |
| Standards/Approvals | RoHS | |
| Length | 4mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SiS | ||
Package Type PowerPAK 1212 | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0095Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 100V | ||
Typical Gate Charge Qg @ Vgs 19.3nC | ||
Maximum Power Dissipation Pd 57W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Width 4mm | ||
Height 1mm | ||
Standards/Approvals RoHS | ||
Length 4mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Vishay N-Channel TrenchFET Gen V power MOSFET optimized for low-loss switching in AI power server solutions and high-density power supplies. It achieves a 100V drain-source rating with exceptionally low on-resistance of 9.5 mΩ maximum at 10V gate drive to minimize conduction losses.
55A continuous drain current at TC=25°C
57W maximum power dissipation
Low total gate charge of 29nC maximum
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