製造零件編號

Vishay SIS Type N-Channel MOSFET, 87 A, 30 V, 8-Pin PowerPAK 1212-8PT SiSA12BDN-T1-GE3

RS庫存編號:: 239-5400
製造零件編號:: SiSA12BDN-T1-GE3
製造商:: Vishay

Vishay SIS Type N-Channel MOSFET, 87 A, 30 V, 8-Pin PowerPAK 1212-8PT SiSA12BDN-T1-GE3

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小計（1 包，共 10 件）*

TWD237.00

(不含稅)

TWD248.80

訂單超過 $1,300.00 免費送貨

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最終 5,990 個，準備發貨

單位	每單位	每包*
10 - 40	TWD23.70	TWD237.00
50 - 90	TWD23.00	TWD230.00
100 - 240	TWD22.30	TWD223.00
250 - 990	TWD21.60	TWD216.00
1000 +	TWD21.10	TWD211.00

* 參考價格

RS庫存編號:: 239-5400
製造零件編號:: SiSA12BDN-T1-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	87A
	Maximum Drain Source Voltage Vds	30V
	Series	SIS
	Package Type	PowerPAK 1212-8PT
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0043Ω
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	52W
	Typical Gate Charge Qg @ Vgs	10nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	3.3 mm
	Height	0.75mm
	Length	3.3mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 87A
	Maximum Drain Source Voltage Vds 30V
	Series SIS
	Package Type PowerPAK 1212-8PT
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0043Ω
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 52W
	Typical Gate Charge Qg @ Vgs 10nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 3.3 mm
	Height 0.75mm
	Length 3.3mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SiSA12BDN-T1-GE3

The Vishay N channel MOSFET has drain current of 87 A. It is used for high power density DC/DC, synchronous rectification, VRMs and embedded DC/DC, battery protection

100 % Rg and UIS tested

Vishay SIS Type N-Channel MOSFET, 87 A, 30 V, 8-Pin PowerPAK 1212-8PT SiSA12BDN-T1-GE3

訂單超過 $1,300.00 免費送貨

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