Vishay SIS Type N-Channel MOSFET, 87 A, 30 V, 8-Pin PowerPAK 1212-8PT SiSA12BDN-T1-GE3
- RS庫存編號:
- 239-5400
- 製造零件編號:
- SiSA12BDN-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD237.00
(不含稅)
TWD248.80
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 5,990 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 40 | TWD23.70 | TWD237.00 |
| 50 - 90 | TWD23.00 | TWD230.00 |
| 100 - 240 | TWD22.30 | TWD223.00 |
| 250 - 990 | TWD21.60 | TWD216.00 |
| 1000 + | TWD21.10 | TWD211.00 |
* 參考價格
- RS庫存編號:
- 239-5400
- 製造零件編號:
- SiSA12BDN-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 87A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SIS | |
| Package Type | PowerPAK 1212-8PT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0043Ω | |
| Maximum Power Dissipation Pd | 52W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 0.75mm | |
| Length | 3.3mm | |
| Width | 3.3 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 87A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SIS | ||
Package Type PowerPAK 1212-8PT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0043Ω | ||
Maximum Power Dissipation Pd 52W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 0.75mm | ||
Length 3.3mm | ||
Width 3.3 mm | ||
Automotive Standard No | ||
The Vishay N channel MOSFET has drain current of 87 A. It is used for high power density DC/DC, synchronous rectification, VRMs and embedded DC/DC, battery protection
100 % Rg and UIS tested
相關連結
- Vishay SIS Type N-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8PT SiSA12BDN-T1-GE3
- Vishay SIS Type N-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8PT SISA10BDN-T1-GE3
- Vishay SiSA14BDN Type N-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8PT SISA14BDN-T1-GE3
- Vishay Type N-Channel MOSFET 60 V Depletion, 8-Pin PowerPAK 1212-8PT SISA18BDN-T1-GE3
- Vishay SIS Type N-Channel MOSFET 80 V, 8-Pin PowerPAK 1212-8S SiSS588DN-T1-GE3
- Vishay SIS Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK 1212-8 SIS112LDN-T1-GE3
- Vishay SIS Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212-8S SISS66DN-T1-GE3
- Vishay SIS Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212-8 SIS184LDN-T1-GE3