Vishay SIS Type N-Channel MOSFET, 178.3 A, 30 V Enhancement, 8-Pin PowerPAK 1212-8S SISS66DN-T1-GE3
- RS庫存編號:
- 281-6039
- Distrelec 貨號:
- 301-56-785
- 製造零件編號:
- SISS66DN-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 3000 件）*
TWD69,000.00
(不含稅)
TWD72,450.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 6,000 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | TWD23.00 | TWD69,000.00 |
| 6000 + | TWD22.30 | TWD66,900.00 |
* 參考價格
- RS庫存編號:
- 281-6039
- Distrelec 貨號:
- 301-56-785
- 製造零件編號:
- SISS66DN-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 178.3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK 1212-8S | |
| Series | SIS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00138Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 65.8W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 24.7nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.3 mm | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 178.3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK 1212-8S | ||
Series SIS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00138Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 65.8W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 24.7nC | ||
Maximum Operating Temperature 150°C | ||
Width 3.3 mm | ||
Length 3.3mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N-channel MOSFET with schottky diode has applications in synchronous rectification, synchronous buck converter, and DC/DC conversions.
TrenchFET Generation IV power MOSFET
SKYFET with monolithic schottky diode
相關連結
- Vishay SIS Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212-8S SISS66DN-T1-GE3
- Vishay SIS Type N-Channel MOSFET 80 V, 8-Pin PowerPAK 1212-8S SiSS588DN-T1-GE3
- Vishay SIS Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK 1212-8 SIS112LDN-T1-GE3
- Vishay SIS Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212-8 SIS184LDN-T1-GE3
- Vishay SIS Type N-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8PT SISA10BDN-T1-GE3
- Vishay SIS Type N-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8PT SiSA12BDN-T1-GE3
- Vishay SISS Type N-Channel MOSFET 150 V Enhancement, 8-Pin PowerPAK 1212-8S SISS5710DN-T1-GE3
- Vishay SIS Type N-Channel MOSFET 60 V Enhancement, 8-Pin 1212-8 SIS4634LDN-T1-GE3