Vishay SIS Type N-Channel MOSFET, 8.8 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8 SIS112LDN-T1-GE3
- RS庫存編號:
- 268-8340
- 製造零件編號:
- SIS112LDN-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 25 件）*
TWD442.50
(不含稅)
TWD464.50
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 6,000 件從 2026年1月23日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 25 | TWD17.70 | TWD442.50 |
| 50 - 75 | TWD17.40 | TWD435.00 |
| 100 - 225 | TWD13.20 | TWD330.00 |
| 250 + | TWD13.00 | TWD325.00 |
* 參考價格
- RS庫存編號:
- 268-8340
- 製造零件編號:
- SIS112LDN-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.8A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SIS | |
| Package Type | PowerPAK 1212-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.119Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 11.8nC | |
| Maximum Power Dissipation Pd | 19.8W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.8A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SIS | ||
Package Type PowerPAK 1212-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.119Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 11.8nC | ||
Maximum Power Dissipation Pd 19.8W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N channel TrenchFET generation 4 power MOSFET is single configuration MOSFET. It is lead free and halogen free and It is used an application as primary side switch, motor drive switch and boost converter.
Tuned for the lowest figure of merit
ROHS compliant
UIS tested 100 percent
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