Vishay SIS Type N-Channel MOSFET, 87 A, 30 V, 8-Pin PowerPAK 1212-8PT SiSA12BDN-T1-GE3
- RS庫存編號:
- 239-5399
- 製造零件編號:
- SiSA12BDN-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 3000 件）*
TWD36,300.00
(不含稅)
TWD38,100.00
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 3,000 個，準備發貨
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | TWD12.10 | TWD36,300.00 |
| 15000 + | TWD11.80 | TWD35,400.00 |
* 參考價格
- RS庫存編號:
- 239-5399
- 製造零件編號:
- SiSA12BDN-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 87A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SIS | |
| Package Type | PowerPAK 1212-8PT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0043Ω | |
| Maximum Power Dissipation Pd | 52W | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.3 mm | |
| Length | 3.3mm | |
| Height | 0.75mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 87A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SIS | ||
Package Type PowerPAK 1212-8PT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0043Ω | ||
Maximum Power Dissipation Pd 52W | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Width 3.3 mm | ||
Length 3.3mm | ||
Height 0.75mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay N channel MOSFET has drain current of 87 A. It is used for high power density DC/DC, synchronous rectification, VRMs and embedded DC/DC, battery protection
100 % Rg and UIS tested
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