Vishay SISS64DN N channel-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin PowerPAK 1212-8S SISS64DN-T1-UE3
- RS庫存編號:
- 736-356
- 製造零件編號:
- SISS64DN-T1-UE3
- 製造商:
- Vishay
N
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TWD40.95
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年6月11日 發貨
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|---|---|
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| 25 - 99 | TWD26.00 |
| 100 + | TWD13.00 |
* 參考價格
- RS庫存編號:
- 736-356
- 製造零件編號:
- SISS64DN-T1-UE3
- 製造商:
- Vishay
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK 1212-8S | |
| Series | SISS64DN | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0021Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 57W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.3mm | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK 1212-8S | ||
Series SISS64DN | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0021Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 57W | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 3.3mm | ||
Length 3.3mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay N-Channel MOSFET designed for efficient power management in various applications, ensuring reliable operation under demanding conditions with Advanced features for reduced switching losses.
Supports synchronous rectification and high power density applications
Ultra-low on-state resistance at specified gate voltages
High continuous drain current rating for demanding loads
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