Vishay SISS26DN N channel-Channel MOSFET, 60 A, 60 V Enhancement, 8-Pin PowerPAK 1212-8S SISS26DN-T1-UE3
- RS庫存編號:
- 736-351
- 製造零件編號:
- SISS26DN-T1-UE3
- 製造商:
- Vishay
N
可享批量折扣
小計（1 組，共 1 件）*
TWD74.00
(不含稅)
TWD77.70
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年6月11日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
膠帶 | 每膠帶 |
|---|---|
| 1 - 9 | TWD74.00 |
| 10 - 24 | TWD48.00 |
| 25 - 99 | TWD25.00 |
| 100 + | TWD24.00 |
* 參考價格
- RS庫存編號:
- 736-351
- 製造零件編號:
- SISS26DN-T1-UE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SISS26DN | |
| Package Type | PowerPAK 1212-8S | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0045Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 24.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 57W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 3.3mm | |
| Width | 3.3mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SISS26DN | ||
Package Type PowerPAK 1212-8S | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0045Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 24.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 57W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 3.3mm | ||
Width 3.3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay N-Channel MOSFET designed for power management applications, featuring robust specifications and efficient operation tailored for demanding electronic environments.
TrenchFET Gen IV technology ensures superior performance and efficiency
Capable of handling a maximum drain-source voltage of 60 V
相關連結
- Vishay SISS26DN N channel-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212-8S SISS26DN-T1-BE3
- Vishay TrenchFET N channel-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK 1212-8S SISS586DN-T1-UE3
- Vishay SISS64DN N channel-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212-8S SISS64DN-T1-UE3
- Vishay TrenchFET N channel-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK 1212-8S SISS516DN-T1-UE3
- Vishay TrenchFET P-Channel MOSFET -20 V Enhancement, 8-Pin PowerPAK 1212-8S SISS5207DN-T1-UE3
- Vishay SISS Type N-Channel MOSFET 30 V Enhancement, 8-Pin 1212-8S SISS52DN-T1-UE3
- Vishay SISS126DN N channel-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK 1212-8 SISS126DN-T1-UE3
- Vishay SISS52DN N channel-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212-8S SISS52DN-T1-BE3