Vishay TrenchFET N channel-Channel MOSFET, 70.6 A, 80 V Enhancement, 8-Pin PowerPAK 1212-8S SISS586DN-T1-UE3

N
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TWD43.00

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TWD45.15

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  • 2027年4月14日 發貨
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RS庫存編號:
735-242
製造零件編號:
SISS586DN-T1-UE3
製造商:
Vishay
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品牌

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

70.6A

Maximum Drain Source Voltage Vds

80V

Series

TrenchFET

Package Type

PowerPAK 1212-8S

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.0085Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

19.5nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

65.7W

Maximum Operating Temperature

150°C

Width

3.3 mm

Standards/Approvals

RoHS Compliant

Length

3.3mm

Automotive Standard

No

COO (Country of Origin):
DE
The Vishay N channel MOSFET is designed for efficient power switching in a wide range of electronic applications. it delivers reliable performance with thorough gate resistance and unclamped inductive switching testing, ensuring robust operation under demanding conditions. the device supports environmentally responsible designs with RoHS compliant and halogen free construction, making it suitable for modern power management systems.

Supports high reliability operation in demanding environments

Suitable for synchronous rectification applications

Ideal for use as a primary side switch in power converters

Meets RoHS compliant and halogen free requirements

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