Vishay SISS126DN N channel-Channel MOSFET, 54.7 A, 80 V Enhancement, 8-Pin PowerPAK 1212-8 SISS126DN-T1-UE3

N
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  • 2026年8月31日 發貨
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RS庫存編號:
735-130
製造零件編號:
SISS126DN-T1-UE3
製造商:
Vishay
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品牌

Vishay

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

54.7A

Maximum Drain Source Voltage Vds

80V

Package Type

PowerPAK 1212-8

Series

SISS126DN

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.00825Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

19.6nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

57W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

3.3mm

Width

3.3mm

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay N-Channel MOSFET designed for optimal efficiency in power management applications, delivering high performance while operating within specified limits.

Operates at a drain-source voltage of 80 V for reliable performance

Exhibits very low on-state resistance to minimise power loss

Offers a high continuous drain current rating of up to 54.7 A

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