Vishay SiSS30ADN N-Channel MOSFET, 54.7 A, 80 V Enhancement, 8-Pin PowerPAK 1212 SiSS30ADN-T1-GE3
- RS庫存編號:
- 210-5010
- 製造零件編號:
- SiSS30ADN-T1-GE3
- 製造商:
- Vishay
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可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
TWD79,800.00
(不含稅)
TWD83,790.00
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 6,000 個，準備發貨
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | TWD26.60 | TWD79,800.00 |
| 6000 + | TWD25.80 | TWD77,400.00 |
* 參考價格
- RS庫存編號:
- 210-5010
- 製造零件編號:
- SiSS30ADN-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 54.7A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAK 1212 | |
| Series | SiSS30ADN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 57W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 19.5nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Height | 830μm | |
| Length | 3.4mm | |
| Width | 3.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 54.7A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAK 1212 | ||
Series SiSS30ADN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 57W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 19.5nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Height 830μm | ||
Length 3.4mm | ||
Width 3.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay N-Channel 80 V (D-S) MOSFET has PowerPAK 1212-8S package type with 54.7 A drain current.
TrenchFET Gen IV power MOSFET
Very low RDS x Qg figure-of-merit (FOM)
Tuned for the lowest RDS x Qoss FOM
100 % Rg and UIS tested
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