Vishay SISS30DN N channel-Channel MOSFET, 54.7 A, 80 V Enhancement, 8-Pin PowerPAK 1212-8S SISS30DN-T1-BE3

N
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  • 2027年6月11日 發貨
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RS庫存編號:
736-352
製造零件編號:
SISS30DN-T1-BE3
製造商:
Vishay
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品牌

Vishay

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

54.7A

Maximum Drain Source Voltage Vds

80V

Package Type

PowerPAK 1212-8S

Series

SISS30DN

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.00825Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

57W

Typical Gate Charge Qg @ Vgs

26nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

150°C

Length

3.3mm

Standards/Approvals

RoHS

Width

3.3mm

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay N-Channel MOSFET designed for efficient synchronous rectification and power conversion applications. It delivers excellent performance stability in demanding environments.

TrenchFET Gen IV technology enhances electrical efficiency

Very low on-resistance minimises energy losses during operation

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