Vishay SISS64DN N channel-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin PowerPAK 1212-8S SISS64DN-T1-BE3
- RS庫存編號:
- 736-354
- 製造零件編號:
- SISS64DN-T1-BE3
- 製造商:
- Vishay
N
可享批量折扣
小計（1 組，共 1 件）*
TWD39.00
(不含稅)
TWD40.95
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年6月11日 發貨
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|---|---|
| 1 - 24 | TWD39.00 |
| 25 - 99 | TWD26.00 |
| 100 + | TWD13.00 |
* 參考價格
- RS庫存編號:
- 736-354
- 製造零件編號:
- SISS64DN-T1-BE3
- 製造商:
- Vishay
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK 1212-8S | |
| Series | SISS64DN | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0021Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 57W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 3.3mm | |
| Width | 3.3mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK 1212-8S | ||
Series SISS64DN | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0021Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 57W | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 3.3mm | ||
Width 3.3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay Power MOSFET delivers exceptional performance with its N-Channel configuration. Designed primarily for efficient switching applications, it optimises power management in various electronic circuits, ensuring reliable operation under demanding conditions.
Features TrenchFET Gen IV technology for enhanced efficiency
Optimised Qg, Qgd, and Qgs ratios reduce switching losses
Continuous drain current rating of up to 40A for robust performance
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