Vishay SiSS N-Channel MOSFET, 50.3 A, 80 V N, 8-Pin 1212-8S SISS32ADN-T1-BE3

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TWD68.00

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TWD71.40

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  • 2027年2月16日 發貨
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10 - 24TWD44.00
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RS庫存編號:
878-900
製造零件編號:
SISS32ADN-T1-BE3
製造商:
Vishay
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品牌

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

50.3A

Maximum Drain Source Voltage Vds

80V

Series

SiSS

Package Type

1212-8S

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.0087Ω

Channel Mode

N

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

65.7W

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

24nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Width

3.4mm

Length

3.4mm

Height

0.83mm

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay MOSFET delivers high performance in power management applications. Designed for efficiency, it excels in synchronous rectification and as a primary side switch in DC/DC converters, ensuring reliable energy control.

TrenchFET Gen IV technology provides enhanced efficiency

Very low on-state resistance minimises power losses

Comprehensive testing guarantees reliability and performance

Versatile package design suits various mounting requirements

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