ROHM RH7G04CBJFRA Type P-Channel Single MOSFETs, -40 V Enhancement, 8-Pin DFN3333T8LSAB RH7G04CBJFRATCB
- RS庫存編號:
- 687-463
- 製造零件編號:
- RH7G04CBJFRATCB
- 製造商:
- ROHM
N
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 組，共 2 件）*
TWD61.00
(不含稅)
TWD64.04
(含稅)
訂單超過 $1,300.00 免費送貨
庫存資訊目前無法查詢
單位 | 每單位 | 每膠帶* |
|---|---|---|
| 2 - 18 | TWD30.50 | TWD61.00 |
| 20 - 48 | TWD27.50 | TWD55.00 |
| 50 - 198 | TWD24.50 | TWD49.00 |
| 200 - 998 | TWD24.00 | TWD48.00 |
| 1000 + | TWD23.50 | TWD47.00 |
* 參考價格
- RS庫存編號:
- 687-463
- 製造零件編號:
- RH7G04CBJFRATCB
- 製造商:
- ROHM
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type P | |
| Maximum Drain Source Voltage Vds | -40V | |
| Package Type | DFN3333T8LSAB | |
| Series | RH7G04CBJFRA | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 17.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 5 V | |
| Maximum Power Dissipation Pd | 62W | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.4 mm | |
| Standards/Approvals | RoHS | |
| Length | 3.4mm | |
| Height | 1.1mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type P | ||
Maximum Drain Source Voltage Vds -40V | ||
Package Type DFN3333T8LSAB | ||
Series RH7G04CBJFRA | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 17.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 5 V | ||
Maximum Power Dissipation Pd 62W | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 3.4 mm | ||
Standards/Approvals RoHS | ||
Length 3.4mm | ||
Height 1.1mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- JP
The ROHM Power MOSFET designed to deliver exceptional performance in demanding applications. This component is specifically engineered for high-efficiency switching, making it ideal for automotive, lighting, and other high-reliability systems. With its robust thermal characteristics, including a maximum power dissipation of 62W and an impressive ±40A continuous drain current, the RH7G04CBJFRA ensures reliable operation under various conditions. Furthermore, this MOSFET integrates advanced features such as avalanche testing and AEC-Q101 qualification, guaranteeing safety and durability in critical environments.
Features a low on-state resistance of 17.7mΩ for improved efficiency
Delivers a maximum pulsed drain current of ±80A, enabling high-performance applications
Utilises wettable flanks for enhanced solder joint reliability
Offers robust thermal resistance to maintain performance under heavy loads
Operates effectively across a wide temperature range of -55 to +175°C
Includes a 100% avalanche test specification for increased safety
Employed in a variety of applications including ADAS and automotive lighting
Comes with detailed packaging specifications for user-friendly integration
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