ROHM RV4 Type P-Channel Single MOSFETs, -20 V Enhancement, 8-Pin DFN1616-6W RV4C060ZPHZGTCR1
- RS庫存編號:
- 646-539
- 製造零件編號:
- RV4C060ZPHZGTCR1
- 製造商:
- ROHM
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 組，共 10 件）*
TWD119.00
(不含稅)
TWD125.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 100 件從 2026年3月23日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每膠帶* |
|---|---|---|
| 10 - 90 | TWD11.90 | TWD119.00 |
| 100 - 240 | TWD10.50 | TWD105.00 |
| 250 - 990 | TWD9.40 | TWD94.00 |
| 1000 - 4990 | TWD7.60 | TWD76.00 |
| 5000 + | TWD7.40 | TWD74.00 |
* 參考價格
- RS庫存編號:
- 646-539
- 製造零件編號:
- RV4C060ZPHZGTCR1
- 製造商:
- ROHM
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Channel Type | Type P | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | -20V | |
| Series | RV4 | |
| Package Type | DFN1616-6W | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±8 V | |
| Maximum Power Dissipation Pd | 1.5W | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 1.7mm | |
| Width | 1.70 mm | |
| Height | 0.8mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Channel Type Type P | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds -20V | ||
Series RV4 | ||
Package Type DFN1616-6W | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±8 V | ||
Maximum Power Dissipation Pd 1.5W | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 1.7mm | ||
Width 1.70 mm | ||
Height 0.8mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The ROHM P channel 20 volt 6 ampere small signal metal oxide semiconductor field effect transistor is one hundred percent unclamped inductive switching tested with wet table flank for automated optical inspection and one hundred thirty micrometer electrode part guarantee.
Low on resistance
Small high power package
Low voltage drive(1.5V)
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