ROHM RH7G04BBJFRAT Type P-Channel Single MOSFETs, -40 V Enhancement, 8-Pin DFN3333T8LSAB RH7G04BBJFRATCB
- RS庫存編號:
- 687-447
- 製造零件編號:
- RH7G04BBJFRATCB
- 製造商:
- ROHM
N
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可享批量折扣
小計（1 組，共 2 件）*
TWD67.00
(不含稅)
TWD70.36
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 100 件從 2026年2月02日 起發貨
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單位 | 每單位 | 每膠帶* |
|---|---|---|
| 2 - 18 | TWD33.50 | TWD67.00 |
| 20 - 48 | TWD29.50 | TWD59.00 |
| 50 - 198 | TWD26.50 | TWD53.00 |
| 200 - 998 | TWD21.50 | TWD43.00 |
| 1000 + | TWD21.00 | TWD42.00 |
* 參考價格
- RS庫存編號:
- 687-447
- 製造零件編號:
- RH7G04BBJFRATCB
- 製造商:
- ROHM
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Channel Type | Type P | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | -40V | |
| Series | RH7G04BBJFRAT | |
| Package Type | DFN3333T8LSAB | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11.9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 75W | |
| Maximum Gate Source Voltage Vgs | 5 V | |
| Typical Gate Charge Qg @ Vgs | 50nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.4 mm | |
| Length | 3.4mm | |
| Standards/Approvals | RoHS | |
| Height | 1.1mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Channel Type Type P | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds -40V | ||
Series RH7G04BBJFRAT | ||
Package Type DFN3333T8LSAB | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11.9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 75W | ||
Maximum Gate Source Voltage Vgs 5 V | ||
Typical Gate Charge Qg @ Vgs 50nC | ||
Maximum Operating Temperature 150°C | ||
Width 3.4 mm | ||
Length 3.4mm | ||
Standards/Approvals RoHS | ||
Height 1.1mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- JP
The ROHM Power MOSFET is engineered for robust performance in demanding applications, offering exceptional efficiency and reliability. With a maximum Drain-Source voltage of -40V and continuous drain current capabilities reaching up to 40A, this component excels in power management. Its low on-state resistance of just 11.9mΩ enhances energy efficiency, making it an ideal choice for automotive and industrial systems. Designed to withstand temperatures from -55 to 175°C, this MOSFET ensures durability and stability under a wide range of conditions, while its AEC-Q101 qualification signals its suitability for automotive environments, contributing to enhanced device safety and efficacy.
AEC Q101 qualified for reliable automotive applications
100% avalanche tested for enhanced safety under extreme conditions
Low thermal resistance junction-case, promoting efficient heat dissipation
Wide operating temperature range ensures performance stability in harsh environments
Minimal on-state resistance optimises energy efficiency, reducing overall power loss
Capacitive characteristics tailored for fast switching applications, enhancing performance
Wettable flanks design facilitates reliable soldering and improved assembly quality
Suitability for various applications, including ADAS, lighting, and body control systems
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