ROHM RH7G04CBKFRA Type N-Channel Single MOSFETs, 40 V Enhancement, 8-Pin DFN3333T8LSAB RH7G04CBKFRATCB

N

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小計(1 組,共 2 件)*

TWD64.00

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TWD67.20

(含稅)

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包裝方式:
RS庫存編號:
687-450
製造零件編號:
RH7G04CBKFRATCB
製造商:
ROHM
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品牌

ROHM

Product Type

Single MOSFETs

Channel Type

Type N

Maximum Drain Source Voltage Vds

40V

Series

RH7G04CBKFRA

Package Type

DFN3333T8LSAB

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5.0mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

19.1nC

Maximum Power Dissipation Pd

62W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Height

1.1mm

Length

3.4mm

Width

3.4 mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
JP
The ROHM N channel Power MOSFET designed to operate efficiently in demanding applications. With a maximum drain-source voltage of 40V and a continuous drain current capability of up to 40A, this component excels in power switching and amplification tasks. Its low on-state resistance of 5.0 mΩ ensures minimal power loss during operation, making it ideal for both automotive and industrial applications. AEC-Q101 qualified, this device provides reliable performance with 100% avalanche testing, ensuring safety and durability in various operating conditions.

Designed for high efficiency with low on-state resistance, reducing heat generation

AEC Q101 qualified, ensuring reliability for automotive standards

100% avalanche tested for enhanced safety under transient conditions

Continuous drain current capability of up to 40A for demanding applications

Operating junction temperature range from -55 to +175°C for versatile usage

Suitable for applications in ADAS, lighting, and body electronics

Complies with strict quality control measures for dependable performance

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