ROHM RD3N03BAT Type P-Channel Single MOSFETs, 80 V Enhancement, 3-Pin TO-252 (TL) RD3N03BATTL1
- RS庫存編號:
- 687-384
- 製造零件編號:
- RD3N03BATTL1
- 製造商:
- ROHM
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可享批量折扣
小計（1 組，共 2 件）*
TWD54.00
(不含稅)
TWD56.70
(含稅)
訂單超過 $1,300.00 免費送貨
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- 2,500 件準備從其他地點送貨
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單位 | 每單位 | 每膠帶* |
|---|---|---|
| 2 - 18 | TWD27.00 | TWD54.00 |
| 20 - 48 | TWD24.00 | TWD48.00 |
| 50 - 198 | TWD21.50 | TWD43.00 |
| 200 - 998 | TWD17.50 | TWD35.00 |
| 1000 + | TWD17.00 | TWD34.00 |
* 參考價格
- RS庫存編號:
- 687-384
- 製造零件編號:
- RD3N03BATTL1
- 製造商:
- ROHM
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type P | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TO-252 (TL) | |
| Series | RD3N03BAT | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 56mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 50nC | |
| Maximum Power Dissipation Pd | 54W | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.8 mm | |
| Length | 10.50mm | |
| Height | 2.3mm | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type P | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TO-252 (TL) | ||
Series RD3N03BAT | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 56mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 50nC | ||
Maximum Power Dissipation Pd 54W | ||
Maximum Operating Temperature 175°C | ||
Width 6.8 mm | ||
Length 10.50mm | ||
Height 2.3mm | ||
Standards/Approvals AEC-Q101, RoHS | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- JP
The ROHM P channel power MOSFET designed to deliver efficient operation in a variety of applications, including motor drives and switching circuits. With a maximum drain-source voltage of -80V and continuous drain current capabilities reaching -30A, this device is engineered for robust performance under demanding conditions. Its low on-resistance of 56mΩ ensures optimal efficiency, minimising energy losses during operation. Additionally, the TO-252 package allows for easy integration into electronic designs, providing versatility and reliability in compact form factors. The RD3N03BAT is also compliant with RoHS and halogen-free standards, making it a suitable choice for environmentally conscious designs.
Low on resistance for improved efficiency and reduced thermal management
High power capability within a compact TO-252 package for versatile application
RoHS and halogen-free compliance ensures environmental safety for modern electronics
Extensive testing, including Rg and UIS, guarantees reliable operation and performance
Wide operating temperature range of -55 to +150 °C supports various environmental conditions
Designed with reliable avalanche energy ratings for enhanced safety during transient conditions
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