MOSFETs | N-Channel | P-Channel | RS
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    MOSFETs

    MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

    These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220. For more information about MOSFETs, please see our complete guide to MOSFETs.

    What are depletion and enhancement modes?

    MOSFET transistors have two modes; depletion and enhancement. Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied. Enhancement mode MOSFETs are like a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

    How do MOSFETs work?

    The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease. Power MOSFETs are like standard MOSFETs but they are designed to handle a higher level of power.

    N-Channel vs. P-Channel MOSFETs

    N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

    P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

    17692 產品顯示為 MOSFETs

    Vishay
    N
    17 A
    100 V
    -
    TO-220 FULLPAK
    -
    Through Hole
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IXYS
    N
    90 A
    850 V
    41 mΩ
    SOT-227
    HiperFET
    Screw Mount
    4
    ±30 V
    Enhancement
    5.5V
    3.5V
    1.2 kW
    -
    Single
    38.23mm
    +150 °C
    1
    -
    340 @ 10 V nC
    25.07mm
    Vishay
    P
    1 A
    100 V
    -
    HVMDIP
    -
    Through Hole
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Infineon
    P
    23 A
    100 V
    117 mΩ
    TO-220AB
    HEXFET
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    4V
    2V
    140 W
    -
    Single
    10.54mm
    +175 °C
    1
    Si
    97 nC @ 10 V
    4.69mm
    onsemi
    P
    3 A
    60 V
    105 mΩ
    SOT-23
    PowerTrench
    Surface Mount
    6
    -20 V, +20 V
    Enhancement
    -
    1V
    1.6 W
    -
    Single
    3mm
    +150 °C
    1
    Si
    15 nC @ 10 V
    1.7mm
    IXYS
    N
    90 A
    600 V
    56 mΩ
    SOT-227
    HiperFET, Polar3
    Screw Mount
    4
    -30 V, +30 V
    Enhancement
    5V
    -
    1.5 kW
    -
    Single
    38.23mm
    +150 °C
    1
    Si
    245 nC @ 10 V
    25.07mm
    Vishay
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Vishay
    P
    50 A
    60 V
    28 mΩ
    TO-252AA
    -
    Surface Mount
    3
    ±20 V
    Enhancement
    -3V
    -1V
    113 W
    -
    Single
    6.73mm
    +150 °C
    1
    -
    110 nC @ 10 V
    6.22mm
    ROHM
    P
    14 A
    30 V
    10.5 mΩ
    SOP
    RRH140P03
    Surface Mount
    8
    -1 V
    Enhancement
    2.5V
    1V
    2 W
    -
    Single
    5.2mm
    +150 °C
    1
    -
    150 nC @ 10 V, 9.2 nC @ 5 V
    4.05mm
    onsemi
    P
    1.5 A
    30 V
    125 mΩ
    SOT-23
    PowerTrench
    Surface Mount
    3
    -20 V, +20 V
    Enhancement
    -
    1V
    500 mW
    -
    Single
    2.92mm
    +150 °C
    1
    Si
    4 nC @ 10 V
    1.4mm
    Vishay
    N
    20 A
    500 V
    270 mΩ
    TO-247AC
    -
    Through Hole
    3
    -30 V, +30 V
    Enhancement
    -
    3V
    250 W
    -
    Single
    15.87mm
    +150 °C
    1
    Si
    65 nC @ 10 V
    5.31mm
    onsemi
    P
    1.3 A
    20 V
    350 mΩ
    SOT-23
    -
    Surface Mount
    3
    -12 V, +12 V
    Enhancement
    1.25V
    -
    400 mW
    -
    Single
    3.04mm
    +150 °C
    1
    Si
    3.1 nC @ 4.5 V
    1.4mm
    Infineon
    N
    48 A
    600 V
    0.06 Ω
    TO-247
    CoolMOS™ P7
    Through Hole
    3
    -
    -
    4V
    -
    -
    -
    -
    -
    -
    1
    -
    -
    -
    Infineon
    N
    11 A
    800 V
    450 mΩ
    TO-220
    CoolMOS™ C3
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    3.9V
    2.1V
    41 W
    -
    Single
    10.65mm
    +150 °C
    1
    Si
    64 nC @ 10 V
    4.85mm
    Infineon
    -
    11 A
    650 V
    -
    PG-TO220
    -
    Surface Mount
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    onsemi
    P
    24 A
    20 V
    80 mΩ
    TO-220
    -
    Through Hole
    3
    -8 V, +8 V
    Enhancement
    -
    0.4V
    60 W
    -
    Single
    10.67mm
    +175 °C
    1
    Si
    25 nC @ 5 V
    4.7mm
    DiodesZetex
    P
    140 mA
    100 V
    20 Ω
    TO-92
    -
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    3.5V
    -
    625 mW
    -
    Single
    4.77mm
    +150 °C
    1
    Si
    -
    2.41mm
    Toshiba
    N
    2 A
    40 V
    390 mΩ
    SOT-23
    -
    Surface Mount
    3
    ±12 V
    Enhancement
    1.2V
    -
    2 W
    -
    Single
    2.9mm
    +150 °C
    1
    -
    1.1 nC @ 4.2 V
    1.8mm
    DiodesZetex
    N
    200 mA
    50 V
    3.5 Ω
    SOT-323 (SC-70)
    -
    Surface Mount
    3
    -20 V, +20 V
    Enhancement
    1.5V
    -
    200 mW
    -
    Single
    2.2mm
    +150 °C
    1
    Si
    -
    1.35mm
    Nexperia
    N
    1.5 A
    60 V
    222 mΩ
    SOT-23
    -
    Surface Mount
    3
    20 V
    Enhancement
    2.7V
    1.3V
    1.45 W
    -
    Single
    3mm
    +150 °C
    1
    -
    3.9 nC @ 10 V
    1.4mm
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