P-Channel MOSFET, 23 A, 100 V, 3-Pin TO-220AB Infineon IRF9540NPBF
- RS庫存編號:
- 541-1225
- Distrelec 貨號:
- 303-41-310
- 製造零件編號:
- IRF9540NPBF
- 製造商:
- Infineon
可享批量折扣
單價 個**
TWD50.00
(不含稅)
TWD52.50
(含稅)
8 "將在 2 工作日發貨 （本地庫存） "*
240 在6 工作日內發貨 (海外庫存)
* 交貨日期可能會根據您選擇的數量和交貨地址而變更。
訂單金額滿 TWD1,300.00 (未稅) 即可享受 免費 送貨服務
即時庫存查詢
單位 | 每單位 |
|---|---|
| 1 - 12 | TWD50.00 |
| 13 - 24 | TWD47.00 |
| 25 + | TWD44.00 |
** 參考價格
- RS庫存編號:
- 541-1225
- Distrelec 貨號:
- 303-41-310
- 製造零件編號:
- IRF9540NPBF
- 製造商:
- Infineon
Infineon HEXFET Series MOSFET, 23A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRF9540NPBF
This P-channel MOSFET is intended for high-performance applications across electronics and automation sectors. It supports a maximum continuous drain current of 23A and a drain-source voltage of 100 V, enhancing circuit efficiency. The enhancement mode configuration allows for accurate control of the output, making it suitable for various industries, including electrical and mechanical applications.
Features & Benefits
• Handles up to 23A continuous drain current for robust performance
• Maximum drain-source voltage of 100V for consistent operation
• Low maximum drain-source resistance of 117 mΩ optimises energy efficiency
• Capable of power dissipation up to 140W for intensive applications
• Typical gate charge of 97 nC at 10V supports fast switching
• Maximum drain-source voltage of 100V for consistent operation
• Low maximum drain-source resistance of 117 mΩ optimises energy efficiency
• Capable of power dissipation up to 140W for intensive applications
• Typical gate charge of 97 nC at 10V supports fast switching
Applications
• Employed in power management circuits for efficient energy conversion
• Used in motor control systems for accurate speed regulation
• Integrated into power supply circuits to improve operational reliability
• Utilised in various automation systems for effective control functions
• Used in motor control systems for accurate speed regulation
• Integrated into power supply circuits to improve operational reliability
• Utilised in various automation systems for effective control functions
What is the temperature range for optimal performance?
The operating temperature range spans from -55°C to +175°C, allowing for effective use in diverse environmental conditions.
How does the gate threshold voltage affect operation?
The gate threshold voltage varies between 2V and 4V, ensuring reliable activation and smooth operation in response to control signals.
What type of mounting is required for installation?
This MOSFET is designed for through-hole mounting, facilitating integration into different electronic assemblies.
Can this MOSFET be used in high-frequency applications?
Yes, it is suitable for high-frequency switching applications due to its low gate charge and rapid switching capabilities.
What is the significance of the low drain-source resistance?
A low drain-source resistance of 117 mΩ enhances overall power efficiency by minimising energy losses during operation.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
屬性 | 值 |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 23 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | TO-220AB |
| Series | HEXFET |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 117 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 140 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +175 °C |
| Transistor Material | Si |
| Length | 10.54mm |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 97 nC @ 10 V |
| Width | 4.69mm |
| Height | 8.77mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.6V |