Infineon HEXFET Type P-Channel MOSFET, 2.3 A, 30 V Enhancement, 3-Pin SOT-23

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RS庫存編號:
913-4064
製造零件編號:
IRLML9303TRPBF
製造商:
Infineon
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品牌

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

2.3A

Maximum Drain Source Voltage Vds

30V

Package Type

SOT-23

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

165mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

2nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.2V

Maximum Power Dissipation Pd

1.25W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Width

1.4 mm

Standards/Approvals

No

Length

3.04mm

Height

1.02mm

Automotive Standard

No

COO (Country of Origin):
PH

P-Channel Power MOSFET 30V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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