Infineon HEXFET Type P-Channel MOSFET, 4.3 A, 20 V Enhancement, 3-Pin SOT-23

RS庫存編號:: 912-8661
製造零件編號:: IRLML2244TRPBF
製造商:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 4.3 A, 20 V Enhancement, 3-Pin SOT-23

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 3000 件）*

TWD8,100.00

(不含稅)

TWD8,520.00

訂單超過 $1,300.00 免費送貨

有庫存

153,000 件準備從其他地點送貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
3000 - 12000	TWD2.70	TWD8,100.00
15000 +	TWD2.60	TWD7,800.00

* 參考價格

RS庫存編號:: 912-8661
製造零件編號:: IRLML2244TRPBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	4.3A
	Maximum Drain Source Voltage Vds	20V
	Series	HEXFET
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	95mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	6.9nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.2V
	Maximum Gate Source Voltage Vgs	12 V
	Maximum Power Dissipation Pd	1.3W
	Maximum Operating Temperature	150°C
	Width	1.4 mm
	Standards/Approvals	No
	Length	3.04mm
	Height	1.02mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 4.3A
	Maximum Drain Source Voltage Vds 20V
	Series HEXFET
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 95mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 6.9nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.2V
	Maximum Gate Source Voltage Vgs 12 V
	Maximum Power Dissipation Pd 1.3W
	Maximum Operating Temperature 150°C
	Width 1.4 mm
	Standards/Approvals No
	Length 3.04mm
	Height 1.02mm
	Automotive Standard No

COO (Country of Origin):: PH

Infineon HEXFET Series MOSFET, 4.3A Maximum Continuous Drain Current, 20V Maximum Drain Source Voltage - IRLML2244TRPBF

This MOSFET is designed for robust performance in a compact SOT-23 package. With a maximum continuous drain current of 4.3A and a drain-source voltage of 20V, it is suitable for various applications in the automation, electronics, and electrical industries. The device features enhancement mode operation and offers reliable performance in high-temperature environments, maintaining functionality in temperatures up to +150°C.

Features & Benefits

• Low RDS(on) of 54mΩ minimises switching losses

• Compatible with industry-standard pinout for easy integration

• High reliability with a maximum power dissipation of 1.3W

• Narrow temperature range for optimal operational efficiency

• Reduced gate charge enhances overall efficiency

Applications

• Ideal for low-voltage switching in electronics

• Suitable for power management in DC-DC converters

• Utilised in motor control systems for automation equipment

• Used in power supply circuits for enhanced energy management

What is the significance of the low RDS(on) in this component?

The low RDS(on) significantly reduces the power losses during operation, leading to improved efficiency and performance, especially in switching applications.

How does the operating temperature range benefit circuit design?

An operating temperature range of -55°C to +150°C allows for versatility in applications, enabling the MOSFET to function reliably in various operating environments, from extreme cold to high heat.

What makes this device suitable for surface mount technology?

The compact SOT-23 package design and compatible pinout facilitate easy integration into PCB layouts, enhancing manufacturing efficiency and allowing for mass production.

Can this MOSFET be used in automotive applications?

Yes, due to its high thermal resistance and reliability at elevated temperatures, it is suitable for automotive applications where heat dissipation is critical.