onsemi P-Channel MOSFET, 24 A, 20 V, 3-Pin TO-220 NDP6020P

此圖片僅供參考,請參閲產品詳細資訊及規格

不可供應
RS 不再對此產品進貨。
包裝方式:
RS庫存編號:
806-1230
製造零件編號:
NDP6020P
製造商:
onsemi
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

onsemi

Channel Type

P

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

20 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

60 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Typical Gate Charge @ Vgs

25 nC @ 5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Width

4.7mm

Length

10.67mm

Height

16.3mm

Minimum Operating Temperature

-65 °C

Enhancement Mode P-Channel MOSFET, ON Semiconductor


ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:


• Voltage controlled P-Channel small signal switch
• High-Density cell design
• High saturation current
• Superior switching
• Great rugged and reliable performance
• DMOS technology

Applications:


• Load Switching
• DC/DC converter
• Battery protection
• Power management control
• DC motor control


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.