N-Channel MOSFET, 600 A, 40 V, 24-Pin SMPD IXYS MMIX1T600N04T2

RS庫存編號:: 875-2475
製造零件編號:: MMIX1T600N04T2
製造商:: IXYS

N-Channel MOSFET, 600 A, 40 V, 24-Pin SMPD IXYS MMIX1T600N04T2

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74 現貨庫存，可於6工作日發貨。

單價（不含稅）個

TWD1,230.00

(不含稅)

TWD1,291.50

單位	每單位
1 - 4	TWD1,230.00
5 - 9	TWD1,200.00
10 +	TWD1,182.00

RS庫存編號:: 875-2475
製造零件編號:: MMIX1T600N04T2
製造商:: IXYS

MMIX1T600N04T2, TrenchT2 GigaMOS Power MOSFET N-Channel 40V 600A SMPD
ESD Control Selection Guide V1

屬性	值
Channel Type	N
Maximum Continuous Drain Current	600 A
Maximum Drain Source Voltage	40 V
Package Type	SMPD
Series	GigaMOS, HiperFET
Mounting Type	Surface Mount
Pin Count	24
Maximum Drain Source Resistance	1.3 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Maximum Power Dissipation	830 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	25.25mm
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	590 nC @ 10 V
Transistor Material	Si
Width	23.25mm
Height	5.7mm
Forward Diode Voltage	1.2V
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 600 A, 40 V, 24-Pin SMPD IXYS MMIX1T600N04T2

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series