製造零件編號

IXYS Single GigaMOS, HiperFET 1 Type N-Channel MOSFET, 132 A, 250 V Enhancement, 24-Pin SMPD MMIX1F180N25T

RS庫存編號:: 875-2481
製造零件編號:: MMIX1F180N25T
製造商:: IXYS

IXYS Single GigaMOS, HiperFET 1 Type N-Channel MOSFET, 132 A, 250 V Enhancement, 24-Pin SMPD MMIX1F180N25T

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 件）*

TWD1,429.00

(不含稅)

TWD1,500.45

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年8月12日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位
1 - 4	TWD1,429.00
5 - 9	TWD1,393.00
10 +	TWD1,372.00

* 參考價格

RS庫存編號:: 875-2481
製造零件編號:: MMIX1F180N25T
製造商:: IXYS

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	IXYS
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	132A
	Maximum Drain Source Voltage Vds	250V
	Series	GigaMOS, HiperFET
	Package Type	SMPD
	Mount Type	Surface Mount
	Pin Count	24
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	570W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Transistor Configuration	Single
	Maximum Operating Temperature	150°C
	Height	5.7mm
	Length	25.25mm
	Width	23.25 mm
	Number of Elements per Chip	1

	選取全部
	品牌 IXYS
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 132A
	Maximum Drain Source Voltage Vds 250V
	Series GigaMOS, HiperFET
	Package Type SMPD
	Mount Type Surface Mount
	Pin Count 24
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 570W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Transistor Configuration Single
	Maximum Operating Temperature 150°C
	Height 5.7mm
	Length 25.25mm
	Width 23.25 mm
	Number of Elements per Chip 1

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series

MOSFET Transistors, IXYS

A wide range of Advanced discrete Power MOSFET devices from IXYS

IXYS Single GigaMOS, HiperFET 1 Type N-Channel MOSFET, 132 A, 250 V Enhancement, 24-Pin SMPD MMIX1F180N25T

訂單超過 $1,300.00 免費送貨

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series

MOSFET Transistors, IXYS

相關連結