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N-Channel MOSFET, 132 A, 250 V, 24-Pin SMPD IXYS MMIX1F180N25T
RS庫存編號:
875-2481
製造零件編號:
MMIX1F180N25T
製造商:
IXYS
此圖片僅供參考,請參閲產品詳細資訊及規格
查看所有MOSFETs
當前暫無庫存,可於17/02/2025發貨,6 工作日送達。
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單價(不含稅) 個
TWD1,487.00
(不含稅)
TWD1,561.35
(含稅)
單位
每單位
1 - 4
TWD1,487.00
5 - 9
TWD1,450.00
10 +
TWD1,428.00
包裝方式:
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行業包裝
RS庫存編號:
875-2481
製造零件編號:
MMIX1F180N25T
製造商:
IXYS
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
規格
MMIX1F180N25T, GigaMOS Trench HiperFET Power MOSFET N-Channel 250V 132A SMPD
ESD Control Selection Guide V1
相容
符合聲明
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
屬性
值
Channel Type
N
Maximum Continuous Drain Current
132 A
Maximum Drain Source Voltage
250 V
Series
GigaMOS, HiperFET
Package Type
SMPD
Mounting Type
Surface Mount
Pin Count
24
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
570 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Width
23.25mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
364 nC @ 10 V
Length
25.25mm
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.3V
Minimum Operating Temperature
-55 °C
Height
5.7mm