IXYS Single GigaMOS, HiperFET 1 Type N-Channel MOSFET, 132 A, 250 V Enhancement, 24-Pin SMPD MMIX1F180N25T
- RS庫存編號:
- 875-2481
- 製造零件編號:
- MMIX1F180N25T
- 製造商:
- IXYS
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 件）*
TWD1,429.00
(不含稅)
TWD1,500.45
(含稅)
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單位 | 每單位 |
|---|---|
| 1 - 4 | TWD1,429.00 |
| 5 - 9 | TWD1,393.00 |
| 10 + | TWD1,372.00 |
* 參考價格
- RS庫存編號:
- 875-2481
- 製造零件編號:
- MMIX1F180N25T
- 製造商:
- IXYS
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 132A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Series | GigaMOS, HiperFET | |
| Package Type | SMPD | |
| Mount Type | Surface Mount | |
| Pin Count | 24 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 570W | |
| Forward Voltage Vf | 1.3V | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.7mm | |
| Width | 23.25 mm | |
| Length | 25.25mm | |
| Number of Elements per Chip | 1 | |
| 選取全部 | ||
|---|---|---|
品牌 IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 132A | ||
Maximum Drain Source Voltage Vds 250V | ||
Series GigaMOS, HiperFET | ||
Package Type SMPD | ||
Mount Type Surface Mount | ||
Pin Count 24 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 570W | ||
Forward Voltage Vf 1.3V | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Height 5.7mm | ||
Width 23.25 mm | ||
Length 25.25mm | ||
Number of Elements per Chip 1 | ||
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
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