IXYS GigaMOS, HiperFET Type N-Channel MOSFET, 500 A, 75 V Enhancement, 24-Pin SMPD MMIX1F520N075T2
- RS庫存編號:
- 875-2471
- Distrelec 貨號:
- 302-53-512
- 製造零件編號:
- MMIX1F520N075T2
- 製造商:
- IXYS
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 件）*
TWD721.00
(不含稅)
TWD757.05
(含稅)
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單位 | 每單位 |
|---|---|
| 1 - 4 | TWD721.00 |
| 5 - 9 | TWD703.00 |
| 10 + | TWD694.00 |
* 參考價格
- RS庫存編號:
- 875-2471
- Distrelec 貨號:
- 302-53-512
- 製造零件編號:
- MMIX1F520N075T2
- 製造商:
- IXYS
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 500A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | SMPD | |
| Series | GigaMOS, HiperFET | |
| Mount Type | Surface | |
| Pin Count | 24 | |
| Maximum Drain Source Resistance Rds | 1.6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 545nC | |
| Maximum Power Dissipation Pd | 830W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.25V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 25.25mm | |
| Height | 5.7mm | |
| Width | 23.25 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 500A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type SMPD | ||
Series GigaMOS, HiperFET | ||
Mount Type Surface | ||
Pin Count 24 | ||
Maximum Drain Source Resistance Rds 1.6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 545nC | ||
Maximum Power Dissipation Pd 830W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.25V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 25.25mm | ||
Height 5.7mm | ||
Width 23.25 mm | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
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