製造零件編號

Vishay TrenchFET Type P-Channel MOSFET, 8 A, 12 V Enhancement, 6-Pin TSOP SI3477DV-T1-GE3

RS庫存編號:: 812-3160
製造零件編號:: SI3477DV-T1-GE3
製造商:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 8 A, 12 V Enhancement, 6-Pin TSOP SI3477DV-T1-GE3

此圖片僅供參考，請參閲產品詳細資訊及規格

小計（1 包，共 20 件）*

TWD266.00

(不含稅)

TWD279.20

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年6月09日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每包*
20 +	TWD13.30	TWD266.00

* 參考價格

RS庫存編號:: 812-3160
製造零件編號:: SI3477DV-T1-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	8A
	Maximum Drain Source Voltage Vds	12V
	Series	TrenchFET
	Package Type	TSOP
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	33mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	-0.8V
	Typical Gate Charge Qg @ Vgs	58nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	10 V
	Maximum Power Dissipation Pd	4.2W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	3.1mm
	Height	1mm
	Width	1.7 mm
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 8A
	Maximum Drain Source Voltage Vds 12V
	Series TrenchFET
	Package Type TSOP
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 33mΩ
	Channel Mode Enhancement
	Forward Voltage Vf -0.8V
	Typical Gate Charge Qg @ Vgs 58nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 10 V
	Maximum Power Dissipation Pd 4.2W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 3.1mm
	Height 1mm
	Width 1.7 mm
	Automotive Standard No

COO (Country of Origin):: CN

Vishay TrenchFET Type P-Channel MOSFET, 8 A, 12 V Enhancement, 6-Pin TSOP SI3477DV-T1-GE3

訂單超過 $1,300.00 免費送貨

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